|作者：||S. Mori, K. Kurushima, K. Kobayashi, H. Ohwa, N. Yasuda, K. Ohwada|
11 Osaka Prefecture University , Sakai , Osaka 599-8531 , Japan
2 2 Toray Research Center , Ohtsu , Shiga 520-8567 , Japan.
3 3 Gifu University , Gifu 501-1193 , Japan.
4 4 Spring 8 , Japan Atomic Energy Agency , Sayo-cho , Hyogo 679-5148 , Japan
|刊名：||MRS Proceedings, 2012, Vol.1397|
|来源数据库：||Cambridge University Press Journal|
|原始语种摘要：||ABSTRACT We have investigated microstructures in both the antiferroelectric (AFE) and relaxor states of Pb(In1/2Nb1/2)O3 (PIN) with the perovskite structure by a transmission electron microscopy (TEM). Electron diffraction (ED) experiments revealed that the AFE state is characterized as the modulated structure with the modulation vector of q =1/4 1/4 0. High-resolution TEM images clearly show the coexistence of two types of domains consisting of the modulated and the nonmodulated structures with the 100 ∼ 200 nm size. On the other hand, in the relaxor state there appear two types of diffuse scatterings in the ED patterns. One is diffuse spots at the 1/2 1/2 0-type reciprocal positions and the other is diffuse streaks elongating along the <110> direction around the... fundamental spots. The real-space TEM images clearly demonstrate the presence of nanodomains with the average size of ∼ 5 nm. These nanodomains in the relaxor state should be responsible for the characteristic dielectric properties.|