Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
作者: Po-Chien ChouSzu-Hao ChenTing-En HsiehStone ChengJesús A. del AlamoEdward Yi Chang
作者单位: 1epartment of Mechanical Engineering, National Chiao-Tung University, No. 1001, University Road, Hsinchu 30010, Taiwan
2Department of Mechanical Engineering, National Chiao-Tung University, No. 1001, University Road, Hsinchu 30010, Taiwan
3Department of Materials Science and Engineering, National Chiao-Tung University, No. 1001, University Road, Hsinchu 30010, Taiwan
4Microsystems Technolog
刊名: Energies, 2017, Vol.10 (2)
来源数据库: Directory of Open Access Journals
DOI: 10.3390/en10020233
关键词: DC stressDegradationGaN HEMTGaN MIS-HEMTReliabilityFailure mechanismsTrapping
原始语种摘要: This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed to identify epitaxy- or process-related degradation mechanisms and to understand their impact on electrical properties. The present paper proposes a suitable methodology to characterize the degradation and failure mechanisms of GaN MIS-HEMTs subjected to stress under various off-state conditions....
全文获取路径: DOAJ  (合作)
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关键词翻译
关键词翻译
  • degradation 减嚣夷酌
  • MIS Management Information Science
  • conditions 条件式
  • suitable 合适的
  • simultaneous 同时的
  • studied 学习
  • stress 应力
  • barrier 堡坝
  • generation 世代
  • impact 冲击碰撞