Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)
作者: Stone ChengPo-Chien Chou
作者单位: 1Department of Mechanical Engineering, National Chiao Tung University, No. 1001, University Road, Hsinchu 30010, Taiwan
刊名: International Journal of Thermal Sciences, 2013, Vol.66 , pp.63-70
来源数据库: Elsevier Journal
DOI: 10.1016/j.ijthermalsci.2012.10.003
关键词: GaN HEMTsPower electronicsThermal managementIR thermal image
英文摘要: Abstract(#br)This study describes the development of packaging for high-power AlGaN/GaN high electron mobility transistors (HEMTs) on a silicon substrate. A transistor is attached to a V-grooved copper base, and mounted on a TO-3P lead-frame. Unlike flipchip or copper-molybdenum-copper (CMC)-based packaging technology, which is popular in the GaN HEMT industry, the proposed packaging structure is implemented on the periphery of the surface of the device to promote thermal dissipation from the Si substrate. The various thermal paths from the GaN gate junction to the case dissipate heat by spreading it to a protective coating; transferring it through bond wires; spreading it laterally throughout the device structure through an adhesive layer, and spreading it vertically through the bottom...
全文获取路径: Elsevier  (合作)
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影响因子:2.47 (2012)

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