Design and optimization of an npn silicon bipolar phototransistor for optical position encoders
作者: G.F. Dalla BettaG.U. PignatelG. VerzellesiP. BelluttiM. BoscardinL. FerrarioN. ZorziA. Maglione
作者单位: 1Dipartimento di Ingegneria dei Materiali, Università di Trento, 38050 Mesiano (TN), Italy
2IRST, Divisione Microsensori ed Integrazione di Sistema, 38050 Povo (TN), Italy
3Optoelettronica Italia S.r.1., 38070 Terlago (TN), Italy
刊名: Microelectronics Journal, 1998, Vol.29 (1), pp.49-58
来源数据库: Elsevier Journal
DOI: 10.1016/S0026-2692(97)00070-0
原始语种摘要: Abstract(#br)We describe an activity aimed at developing npn silicon bipolar phototransistors to be used in optical position encoders. Extensive numerical proces and device simulations have been carried out, providing the guidelines for the definition of the phototransistor fabrication process. Results from the electrical and optical characterization of manifactured devices are shown. With respect to the designed fabrication process, only a little adjustment of the technological parameters has been to be necessary to achieve a final product suitable for the intended application.
全文获取路径: Elsevier  (合作)
影响因子:0.912 (2012)