CCE measurements on heavily irradiated micro-strip sensors
作者: J. BernardiniL. BorrelloF. FioriA. Messineo
作者单位: 1S.N.S. and INFN of Pisa, Italy
2University and INFN of Pisa, Largo B. Pontecorvo, 3, 56127 Pisa, Italy
刊名: Nuclear Inst. and Methods in Physics Research, A, 2009, Vol.612 (3), pp.478-481
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2009.08.007
关键词: Micro-stripSiliconRadiation hardnessRadiation damageSMARTRD50CMSLHCS-LHC
英文摘要: Abstract(#br)The paper describes a study of the radiation hardness of micro-strip devices, processed on different silicon substrates, designed to explore the feasibility of a tracker system for the experiments upgrade at the Super-LHC (S-LHC) collider. The radiation tolerance of the devices has been established comparing the Charge Collection Efficiency (CCE) measured on irradiated and not irradiated sensors of the same type. The CCE has been measured with minimum ionizing events and the read-out electronics and data acquisition system are the same designed for the CMS experiment at LHC. The performances of different silicon substrates (MCz, Fz, Epi) 1 1 MCz indicates Magnetic Czochralski grown wafers, Fz Float Zone one and Epi Epitaxial silicon layer. and different bulk doping types (p,...
全文获取路径: Elsevier  (合作)
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