Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade
作者: G. CalderiniA. BagoliniM. BombenM. BoscardinL. BosisioJ. ChauveauG. GiacominiA. La RosaG. MarchioriN. Zorzi
作者单位: 1Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris, France
2Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa, Italy
3Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (TN), Italy
4Università degli studi di Trieste and INFN-Trieste, Italy
5Section de Physique (DPNC), Universitè de Geneve, Geneve, Switzerland
刊名: Nuclear Inst. and Methods in Physics Research, A, 2014, Vol.765 , pp.146-150
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2014.05.009
关键词: TCAD simulationsPlanar silicon radiation detectorsFabrication technologyTracking detectors
原始语种摘要: Abstract(#br)In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.
全文获取路径: Elsevier  (合作)
分享到:

×