Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance
作者: V. FadeyevS. ElyZ. GallowayJ. NgoC. ParkerH.F.-W. SadrozinskiM. ChristophersenB.F. PhlipsG. PellegriniJ.M. RafiD. QuirionG.-F. Dalla BettaM. BoscardinG. CasseI. GorelovM. HoeferkampJ. MetcalfeS. SeidelE. GaubasT. CeponisJ.V. Vaitkus
作者单位: 1Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064, USA
2U.S. Naval Research Laboratory, Code 7654, 4555 Overlook Avenue, Southwest Washington, DC 20375, USA
3Instituto de Microelectrónica de Barcelona, IMB-CNM-CSIC, Bellaterra, Barcelona, Spain
4INFN and University of Trento, Via Sommarive, 14, 38123 Povo di Trento (TN), Italy
5Fondazione Bruno Kessler, Via Sommarive, 18, 38123 Povo di Trento (TN), Italy
6Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE, UK
7Department of Physics and Astronomy, University of New Mexico, MSC 07 4220, 1919 Lomas Boulevard NE, Albuquerque, NM 87131, USA
8Institute of Applied Research, Vilnius University, Sauletekio 9, LT-10222 Vilnius, Lithuania
刊名: Nuclear Inst. and Methods in Physics Research, A, 2014, Vol.765 , pp.59-63
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2014.05.032
关键词: Slim edgeActive areaScribingCleavingPassivationRadiation
原始语种摘要: Abstract(#br)We pursue scribe–cleave–passivate (SCP) technology for making “slim edge” sensors. The goal is to reduce the inactive region at the periphery of the devices while maintaining their performance. In this paper we report on two aspects of the current efforts. The first one involves fabrication options for mass production. We describe the automated cleaving tests and a simplified version of SCP post-processing of n-type devices. Another aspect is the radiation resistance of the passivation. We report on the radiation tests of n- and p-type devices with protons and neutrons.
全文获取路径: Elsevier  (合作)
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