Evaluation of thermal performance of all-GaN power module in parallel operation
作者: Po-Chien ChouStone ChengSzu-Hao Chen
作者单位: 1Dept. of Mechanical Eng., National Chiao-Tung University, Hsinchu 300, Taiwan
刊名: Applied Thermal Engineering, 2014, Vol.70 (1), pp.593-599
来源数据库: Elsevier Journal
DOI: 10.1016/j.applthermaleng.2014.05.081
关键词: GaN HEMTsPower semiconductor devicesPower moduleParallel operationStatic parameters
英文摘要: Abstract(#br)This work presents an extensive thermal characterization of a single discrete GaN high-electron-mobility transistor (HEMT) device when operated in parallel at temperatures of 25 °C–175 °C. The maximum drain current ( I D max ), on-resistance ( R ON ), pinch-off voltage ( V P ) and peak transconductance ( g m ) at various chamber temperatures are measured and correlations among these parameters studied. Understanding the dependence of key transistor parameters on temperature is crucial to inhibiting the generation of hot spots and the equalization of currents in the parallel operation of HEMTs. A detailed analysis of the current imbalance between two parallel HEMT cells and its consequential effect on the junction temperature are also presented. The results from variations in...
全文获取路径: Elsevier  (合作)
影响因子:2.127 (2012)