Design optimization of ultra-fast silicon detectors
作者: N. CartigliaR. ArcidiaconoM. BaselgaR. BellanM. BoscardinF. CennaG.F. Dalla BettaP. Fernndez-MartnezM. FerreroD. FloresZ. GallowayV. GrecoS. HidalgoF. MarchettoV. MonacoM. ObertinoL. PancheriG. PaternosterA. PicernoG. PellegriniD. QuirionF. RaveraR. SacchiH.F.-W. SadrozinskiA. SeidenA. SolanoN. Spencer
作者单位: 1INFN Torino, Italy
2Università di Torino, Torino, Italy
3Università del Piemonte Orientale, Novara, Italy
4Santa Cruz Institute for Particle Physics UC Santa Cruz, CA 95064, USA
5Centro Nacional de Microeletronica, IMB-CNM, Barcelona, Spain
6Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento, Italy
7Università di Trento, Via Sommarive 9, 38123 Trento, Italy
刊名: Nuclear Inst. and Methods in Physics Research, A, 2015, Vol.796 , pp.141-148
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2015.04.025
关键词: SiliconFast detectorLow gainAPDCharge multiplication
原始语种摘要: Abstract(#br)Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.
全文获取路径: Elsevier  (合作)
分享到:

×