Optimization of high optical gain in type-II In 0.70 Ga 0.30 As/GaAs 0.40 Sb 0.60 lasing nano-heterostructure for SWIR applications
作者: H.K. NirmalNisha YadavF. RahmanP.A. Alvi
作者单位: 1Department of Physics, Banasthali University, Rajasthan, 304022, India
2Department of Physics, Aligarh Muslim University, Aligarh, 202002, UP, India
刊名: Superlattices and Microstructures, 2015, Vol.88 , pp.154-160
来源数据库: Elsevier Journal
DOI: 10.1016/j.spmi.2015.09.006
关键词: Optical gainType-II heterostructuresk.p methodSWIR region
英文摘要: Abstract(#br)Most of the nano-heterostructures exhibiting lasing action in NIR (near infra-red) region that have been modeled and simulated are based on type-I category. The nano-scaled lasing heterostructures, however, of type-II category operating in SWIR (short wave infra-red) region have not been well studied. In this paper, for SWIR generation, an M-shaped type-II In 0.70 Ga 0.30 As/GaAs 0.40 Sb 0.60 symmetric lasing nano-heterostructure has been designed. In order to simulate the optical gain, firstly the wave functions associated with conduction and valence sub-bands, carrier densities within the bands, energy band dispersion relations for the quantum well structure, optical matrix elements and finally optical gain have been studied by utilizing the six band k.p method. For the...
全文获取路径: Elsevier  (合作)
影响因子:1.564 (2012)

  • lasing 产生激光
  • optical 光学的
  • applications 应用程序
  • GaAs 砷化镓