Development and characterization of the thermal behavior of packaged cascode GaN HEMTs
作者: Hsin-Ping ChouStone ChengChia-Hsiang ChengChia-Wei Chuang
作者单位: 1Department of Mechanical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
刊名: Materials Science in Semiconductor Processing, 2016, Vol.41 , pp.304-311
来源数据库: Elsevier Journal
DOI: 10.1016/j.mssp.2015.09.023
关键词: Thermal behaviorPackagedGaN HEMTs deviceInfrared thermographyRaman
原始语种摘要: Abstract(#br)This study investigates the heat generation behavior of packaged normally-on multi-finger AlGaN/GaN high electron mobility transistors (HEMTs) that are cascoded with a low-voltage MOSFET (LVMOS) and a SiC Schottky barrier diode (SBD). By foremost carrying out electro-thermal simulation and related thermal measurements with infrared thermography and Raman spectroscopy for basic 5mm GaN HEMTs, the location of hot spot in operating device can be obtained. Based on the outcome, further packaged cascode GaN HEMT is analyzed. A hybrid integration of the GaN-HEMT, LVMOS, and SiC SBD are assembled on a directly bonded copper (DBC) substrate in the four-pin metal case TO-257 package. The metal plate is used as both the source terminal and heat sink. The analytical...
全文获取路径: Elsevier  (合作)
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影响因子:1.338 (2012)

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