Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
作者: G. CalderiniA. BagoliniR. BeccherleM. BombenM. BoscardinL. BosisioJ. ChauveauG. GiacominiA. La RosaG. MarchioriN. Zorzi
作者单位: 1Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris, France
2Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa, Italy
3Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (TN), Italy
4Istituto Nazionale di Fisica Nucleare, Sez. di Pisa, Italy
5Università degli studi di Trieste, Italy
6INFN-Trieste, Italy
7Section de Physique (DPNC), Universitè de Geneve, Geneve, Switzerland
刊名: Nuclear Inst. and Methods in Physics Research, A, 2016, Vol.831 , pp.133-136
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2016.04.118
关键词: TCAD simulationsSilicon radiation detectorsFabrication technologyActive edgeTracking detectors
原始语种摘要: Abstract(#br)In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.
全文获取路径: Elsevier  (合作)
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