Ultra-fast silicon detectors (UFSD)
作者: H.F.-W. SadrozinskiA. AnkerJ. ChenV. FadeyevP. FreemanZ. GallowayB. GrueyH. GrabasC. JohnZ. LiangR. LosakulS.N. MakC.W. NgA. SeidenN. WoodsA. ZatserklyaniyB. BaldassarriN. CartigliaF. CennaM. FerreroG. PellegriniS. HidalgoM. BaselgaM. CarullaP. Fernandez-MartinezD. FloresA. MerlosD. QuirionM. MikužG. KrambergerV. CindroI. MandićM. Zavrtanik
作者单位: 1SCIPP, Univ. of California Santa Cruz, CA 95064, USA
2Univ. of Torino and INFN, Torino, Italy
3Centro Nacional de Microelectrónica (CNM-CSIC), Barcelona, Spain
4IJS Ljubljana, Slovenia
刊名: Nuclear Inst. and Methods in Physics Research, A, 2016, Vol.831 , pp.18-23
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2016.03.093
关键词: Fast silicon sensorsCharge multiplicationThin tracking sensorsSilicon stripPixel detectors
原始语种摘要: Abstract(#br)We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We have performed several beam tests with LGAD of different gain and report the measured timing resolution, comparing it with laser injection and simulations. For the 300μm thick LGAD, the timing resolution measured at test beams is 120ps while it is 57ps for IR laser, in agreement with simulations using Weightfield2. For the development of thin sensors and their readout electronics, we focused on the understanding of the...
全文获取路径: Elsevier  (合作)
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