Impact of gate placement on RF power degradation in GaN high electron mobility transistors
作者: Jungwoo JohJesús A. del Alamo
作者单位: 1Microsystems Technology Laboratory, Massachusetts Institute of Technology, Cambridge, 60 Vassar St., Rm. 39-567, Cambridge, MA 02139, United States
刊名: Microelectronics Reliability, 2011, Vol.52 (1), pp.33-38
来源数据库: Elsevier Journal
DOI: 10.1016/j.microrel.2011.09.008
英文摘要: Abstract(#br)We have investigated the RF power degradation of GaN high electron mobility transistors (HEMTs) with different gate placement in the source–drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsible for high-voltage DC degradation in the OFF state and is likely driven by electric field. In contrast, offset gate devices under RF power stress showed a large increase in source resistance, which is not regularly observed in DC stress experiments. High-power pulsed stress tests suggest that the combination of high voltage and high current stress maybe the cause of RF power degradation...
全文获取路径: Elsevier  (合作)
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影响因子:1.137 (2012)

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