Role of stress voltage on structural degradation of GaN high-electron-mobility transistors
作者: Jungwoo JohJesús A. del AlamoKurt LangworthySujing XieTsvetanka Zheleva
作者单位: 1Microsystems Technology Laboratories, MIT, Cambridge, MA, United States
2CAMCOR, University of Oregon, Eugene, OR, United States
3US Army Research Laboratory, Adelphi, MD, United States
刊名: Microelectronics Reliability, 2010, Vol.51 (2), pp.201-206
来源数据库: Elsevier Journal
DOI: 10.1016/j.microrel.2010.08.021
英文摘要: Abstract(#br)In GaN high-electron-mobility transistors, electrical degradation due to high-voltage stress is characterized by a critical voltage at which irreversible degradation starts to take place. Separately, cross-sectional TEM analysis has revealed significant crystallographic damage for severely degraded devices. Furthermore, a close correlation between the degree of drain current degradation and material degradation has been reported. However, the role of the critical voltage in physical degradation has not been explored. In this work, we investigate the connection between electrical degradation that occurs around and beyond the critical voltage and the formation of crystallographic defects through detailed electrical and TEM analysis, respectively. We find that a groove in the...
全文获取路径: Elsevier  (合作)
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影响因子:1.137 (2012)

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