Characterization of non-uniformly irradiated silicon micro-strip sensors
作者: M.E. DinardoG. AlimontiG. ChiodiniP. d’AngeloL. MoroniS. Sala
作者单位: 1INFN and Università degli Studi di Milano, Italy
2INFN Milano, Italy
3INFN Lecce, Italy
刊名: Nuclear Inst. and Methods in Physics Research, A, 2006, Vol.571 (3), pp.636-643
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2006.11.038
关键词: LaserRadiation hardnessSensor characterizationSilicon micro-strip
英文摘要: Abstract(#br)We describe a method we used to characterize micro-strip sensors, which were non-uniformly irradiated up to a fluence of ∼ 10 14 1MeV equivalent neutrons per cm 2 . The method allows for a complete bidimensional mapping of the sensor characteristics over the entire active area. Information is gathered through the Q – V characteristic, measured scanning the sensor with an infra-red laser source. Q – V characteristics are then fitted to a simple analytical model, which returns local full-depletion voltages, carrier lifetimes, etc. With the present method one can even obtain the profile of the absorbed fluence. The development and tuning of the present method have been done in the context of the R&D programs for the micro-strip forward tracker of the BTeV...
全文获取路径: Elsevier  (合作)
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