Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate
作者: Stone ChengPo-Chien ChouWei-Hua ChiengE.Y. Chang
作者单位: 1Dept. of Mechanical Eng., National Chiao-Tung University, Hsinchu 300, Taiwan
2Dept. of Materials Science and Eng., National Chiao-Tung University, Hsinchu 300, Taiwan
刊名: Applied Thermal Engineering, 2013, Vol.51 (1-2), pp.20-24
来源数据库: Elsevier Journal
DOI: 10.1016/j.applthermaleng.2012.08.009
关键词: GaN HEMTsPower electronicsThermal managementInfrared (IR) thermography
英文摘要: Abstract(#br)This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W.
全文获取路径: Elsevier  (合作)
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影响因子:2.127 (2012)

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