Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress
作者: Yufei WuChia-Yu ChenJesús A. del Alamo
作者单位: 1Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
刊名: Microelectronics Reliability, 2014, Vol.54 (12), pp.2668-2674
来源数据库: Elsevier Journal
DOI: 10.1016/j.microrel.2014.09.019
关键词: GaN HEMTArrheniusActivation energyDegradation
英文摘要: Abstract(#br)We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate a new scheme to extract the activation energy ( E a ) of device degradation from step-temperature measurements on a single device. The E a ’s we obtain closely agree with those extracted from conventional accelerated life test experiments on a similar device technology.
全文获取路径: Elsevier  (合作)
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影响因子:1.137 (2012)

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