The INFN–FBK “Phase-2” R&D program
作者: G.-F. Dalla BettaM. BoscardinM. BombenM. BrianziG. CalderiniG. DarboR. Dell’OrsoA. GaudielloG. GiacominiR. MendicinoM. MeschiniA. MessineoS. RonchinD.M.S. SultanN. Zorzi
作者单位: 1Università di Trento, Dipartimento di Ingegneria Industriale, I-38123 Trento, Italy
2TIFPA INFN, I-38123 Trento, Italy
3Fondazione Bruno Kessler (FBK), I-38123 Trento, Italy
4Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), 75252 Paris, France
5INFN Sezione di Firenze, I-50019 Sesto Fiorentino, Italy
6Università di Pisa, Dipartimento di Fisica, I-56127 Pisa, Italy
7INFN Sezione di Pisa, I-56127 Pisa, Italy
8INFN Sezione di Genova, I-16146 Genova, Italy
9Università di Genova, Dipartimento di Fisica, I-16146 Genova, Italy
刊名: Nuclear Inst. and Methods in Physics Research, A, 2016, Vol.824 , pp.388-391
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2015.08.074
关键词: High Luminosity LHC3D silicon sensorsActive edgesFabrication technology
原始语种摘要: Abstract(#br)We report on the 3-year INFN ATLAS–CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6” p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2×10 16 n eq cm −2 ). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first...
全文获取路径: Elsevier  (合作)