Sensors for ultra-fast silicon detectors
作者: H.F.-W. SadrozinskiM. BaselgaS. ElyV. FadeyevZ. GallowayJ. NgoC. ParkerD. SchumacherA. SeidenA. ZatserklyaniyN. CartigliaG. PellegriniP. Fernández-MartínezV. GrecoS. HidalgoD. Quirion
作者单位: 1Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064, USA
2INFN Torino, Torino, Italy
3Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona, Spain
刊名: Nuclear Inst. and Methods in Physics Research, A, 2014, Vol.765 , pp.7-11
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2014.05.006
关键词: Fast silicon sensorsCharge multiplicationThin tracking sensorsSilicon stripPixel detectors
原始语种摘要: Abstract(#br)We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C – V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.
全文获取路径: Elsevier  (合作)

  • 扩散 电阻率
  • silicon 
  • ultra 
  • avalanche 雪崩
  • multiplication 生殖
  • dependence 从属
  • dopant 掺杂剂
  • tracking 跟踪
  • electrical 电的
  • resistivity 电阻率
  • diffusion 电阻率