Characterization of 3D and planar Si diodes with different neutron converter materials
作者: R. MendicinoM. BoscardinS. CarturanG.-F. Dalla BettaM. Dalla PalmaG. MaggioniA. QuarantaS. Ronchin
作者单位: 1Department of Industrial Engineering, University of Trento, Via Sommarive, 9, I-38123 Trento, Italy
2INFN, TIFPA, Via Sommarive, 14, I-38123 Trento, Italy
3Fondazione Bruno Kessler, FBK-CMM, Via Sommarive, 18, I-38123 Trento, Italy
4INFN, LNL, Viale dell׳Universitá, 2, I-35020 Legnaro, Italy
5Department of Physics and Astronomy, University of Padova, Via Marzolo, 8, I-35131, Italy
刊名: Nuclear Inst. and Methods in Physics Research, A, 2015, Vol.796 , pp.23-28
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2015.04.026
关键词: Solid state detectorsDetector modelling and simulationsParticle tracking detectors (solid-state detectors)Neutron detectors
原始语种摘要: Abstract(#br)In this paper, we report on the characterization of silicon 3D and planar sensors, coupled with different neutron converter materials, such as 10 B, B 4 10 C and 6 LiF, with different deposition thickness. Selected results from the electrical and functional characterization of the devices are shown and comparatively discussed with the aid of SRIM and Geant4 simulations.(#br)The limited neutron detection efficiency, on the order of ≃ 1% (planar) and ≃ 8% (3D) from simulations, is understood, and hints for the optimization of the devices have been derived.
全文获取路径: Elsevier  (合作)
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