The INFN-FBK pixel R&D program for HL-LHC
作者: M. MeschiniG.F. Dalla BettaM. BoscardinG. CalderiniG. DarboG. GiacominiA. MessineoS. Ronchin
作者单位: 1INFN Sezione di Firenze, Sesto Fiorentino, Italy
2Università di Trento, Dipartimento di Ingegneria Industriale, Trento, Italy
3TIFPA INFN, Trento, Italy
4Fondazione Bruno Kessler (FBK), Trento, Italy
5Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris, France
6INFN Sezione di Genova, Genova, Italy
7Università di Pisa, Dipartimento di Fisica, Pisa, Italy
8INFN, Pisa, Italy
刊名: Nuclear Inst. and Methods in Physics Research, A, 2016, Vol.831 , pp.116-121
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2016.05.009
关键词: Silicon detectorsIrradiationActive edge3D pixelsPlanar pixels
原始语种摘要: Abstract(#br)We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.
全文获取路径: Elsevier  (合作)