Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers
作者: Z.Y. XuF.J. XuC.C. HuangJ.M. WangX. ZhangZ.J. YangX.Q. WangB. Shen
作者单位: 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2Collaboration Innovation Center of Quantum Matter, Beijing 100084, China
刊名: Journal of Crystal Growth, 2016, Vol.447 , pp.1-4
来源数据库: Elsevier Journal
DOI: 10.1016/j.jcrysgro.2016.04.055
关键词: A3. Metalorganic chemical vapor depositionB1. NitridesB2. Semiconducting III-V materials
原始语种摘要: Abstract(#br)Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers are investigated by Hall-effect and current–voltage measurements. It is found that this structure possesses both merits of high two-dimensional electron gas (2DEG) density and low gate leakage current density, while maintaining high 2DEG mobility. Furthermore, temperature dependence of the 2DEG density in this structure is verified to follow a combined tendency of InAlN/GaN (increase) and AlGaN/GaN (decrease) heterostructures with increasing temperature from 90K to 400K, which is mainly caused by superposition of the effects from carrier thermal activation induced by extrinsic factors in InAlN layer and the reduced conduction-band discontinuity.
全文获取路径: Elsevier  (合作)
分享到:
来源刊物:
影响因子:1.552 (2012)

×