Evaluation of thermal performance of packaged GaN HEMT cascode power switch by transient thermal testing
作者: Szu-Hao ChenPo-Chien ChouStone Cheng
作者单位: 1Department of Mechanical Engineering, National Chiao-Tung University, No. 1001, University Road, Hsinchu 30010, Taiwan
刊名: Applied Thermal Engineering, 2016, Vol.98 , pp.1003-1012
来源数据库: Elsevier Journal
DOI: 10.1016/j.applthermaleng.2015.12.110
关键词: GaN-HEMT cascode switchPower semiconductor deviceReal power analysisTransient thermal impedanceThermal resistanceThermal capacitance
英文摘要: Abstract(#br)In this investigation, thermal transient measurements and analyses are used to study the thermal performance of a cascoded GaN power device. The method is based on the thermal characterization of the on-resistance ( R on ) of the device and the synchronized current–voltage characteristics under continuous operation. The changes in R on with temperature (25 °C–180 °C) are measured, statistically studied, and correlations investigated. The proposed method for estimating transient thermal impedance has the following characteristics: (1) it is robust and reproducible; (2) it yields a heating curve to prevent over-heating for the device under test (DUT); (3) it provides in-situ current–voltage characterization; (4) it includes a transient offset correction for initial transient...
全文获取路径: Elsevier  (合作)
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影响因子:2.127 (2012)

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