Plasma characteristics and properties of Cu films prepared by high power pulsed magnetron sputtering
作者: B.H. WuJ. WuF. JiangD.L. MaC.Z. ChenH. SunY.X. LengN. Huang
作者单位: 1Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
2School of Mechanical Engineering, Jingchu University of Technology, Jingmen, 448000, China
3State Key Laboratory of Physical Chemistry of Surfaces, Jiangyou, Sichuan, 621700, China
刊名: Vacuum, 2017, Vol.135 , pp.93-100
来源数据库: Elsevier Journal
DOI: 10.1016/j.vacuum.2016.10.032
关键词: High power pulsed magnetron sputteringCu filmsBias voltageSpecies currentHigh electrical resistivity
英文摘要: Abstract(#br)Copper (Cu) has been proposed as a well-known material for metallization in Si-based semiconductor devices because of its low resistivity, high chemical stability, and excellent electromigration resistance. In order to improve the properties of Cu films further, the films were deposited on a Si (100) substrate using high power pulsed magnetron sputtering (HPPMS) by varying the substrate bias voltage. The Cu plasma characteristics and film properties were investigated as well. It was found that both electrons and ions contribute to the overall species current on the substrate. Electrons dominate the species current at the beginning and positive ions contribute the majority at end of the pulse. As the substrate bias increases from −17.3 V (floating voltage) to −100 V, the...
全文获取路径: Elsevier  (合作)
影响因子:1.53 (2012)