Signal formation in irradiated silicon detectors
作者: B. BaldassarriN. CartigliaF. CennaH. SadrozinskiA. Seiden
作者单位: 1University College London, Gower St, WC1E 6BT London, United Kingdom
2University of California, Santa Cruz, CA 95064, USA
3INFN - Torino, Italy
4Università di Torino, Italy
刊名: Nuclear Inst. and Methods in Physics Research, A, 2016
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2016.06.010
关键词: Double junctionSilicon sensorsSimulationTrapping
原始语种摘要: Abstract(#br)In this paper we present an initial study on the effects induced by radiation on the signal generated by a minimum ionising particle in silicon detector. The results are obtained by implementing in the simulation programme Weightfield2 (WF2) charge carrier trapping and non linear distribution of the electric field. Results of sample simulations are presented, along with a discussion of the limitations of the current approach and ideas for future improvements.
全文获取路径: Elsevier  (合作)
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