Radiation resistant LGAD design
作者: M. FerreroR. ArcidiaconoM. BarozziM. BoscardinN. CartigliaG.F. Dalla BettaZ. GallowayM. MandurrinoS. MazzaG. PaternosterF. FicorellaL. PancheriH-F W. SadrozinskiF. SivieroV. SolaA. StaianoA. SeidenM. TornagoY. Zhao
作者单位: 1INFN, Torino, Italy
2Università del Piemonte Orientale, Italy
3Fondazione Bruno Kessler, Trento, Italy
4Università di Trento, Trento, Italy
5TIFPA-INFN, via Sommarive 18, 38123, Povo (TN), Italy
6Università di Torino, Torino, Italy
7SCIPP, University of California Santa Cruz, CA, USA
刊名: Nuclear Inst. and Methods in Physics Research, A, 2018
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2018.11.121
关键词: SiliconTimingLGADAcceptor removal
原始语种摘要: Abstract(#br)In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs with a gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced at FBK. These sensors have been exposed to neutron fluences up to ϕ n ∼ 3 ⋅ 1 0 16 n ∕ c m 2 and to proton fluences up to ϕ p ∼ 9 ⋅ 1 0 15 p ∕ c m 2 to test their radiation resistance. The experimental results show that Gallium-doped LGAD are more heavily affected by the initial acceptor removal mechanism than those doped with Boron, while the addition of Carbon...
全文获取路径: Elsevier  (合作)

  • acceptor 收体
  • width 幅度
  • doped 掺杂(了)的掺了添加剂的
  • dependence 从属
  • heavily 
  • radiation 辐射
  • layer 
  • diffusion 扩散
  • removal 消去
  • doping 掺杂