Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor
作者: JianBo LiangNaoki KishiTetsuo SogaTakashi JimboMohsin Ahmed
作者单位: 1Department of Frontier Materials,Nagoya Institute of Technology, Nagoya 4668555, Japan
2Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 4668555, Japan
刊名: Thin Solid Films, 2012, Vol.520 (7), pp.2679-2682
来源数据库: Elsevier Journal
DOI: 10.1016/j.tsf.2011.11.037
关键词: Water vaporSurfacesOxideCuprous oxideSemiconducting materials
原始语种摘要: Abstract(#br)We present an improved preparation method for the growth of high quality crystals of cuprous oxide films grown by thermal oxidation of cupper foils with water vapor. This method proved to be good for preparing cuprous oxide films with high purity and large grain size. X-ray diffraction studies revealed the formation of Cu 2 O films with preferred (111) orientation. The cuprous oxide diodes fabricated by the above technique have been studied using current–voltage method.
全文获取路径: Elsevier  (合作)
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影响因子:1.604 (2012)

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