Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs
作者: Donghyun JinJesús A. del Alamo
作者单位: 1Microsystems Technology Laboratories, Massachusetts Institute of Technology, 60 Vassar St., Rm. 39-567, Cambridge, MA 02139, United States
刊名: Microelectronics Reliability, 2012, Vol.52 (12), pp.2875-2879
来源数据库: Elsevier Journal
DOI: 10.1016/j.microrel.2012.08.023
英文摘要: Abstract(#br)We have investigated the impact of high-power (HP) stress on the dynamic ON-resistance ( R ON ) in high-voltage GaN High-Electron-Mobility Transistors (HEMTs). We use a newly proposed dynamic R ON measurement methodology which allows us to observe R ON transients after an OFF-to-ON switching event from 200ns up to any arbitrary length of time over many decades. We find that HP-stress results in much worsened dynamic R ON especially in the sub-ms range with minor changes on a longer time scale. We attribute this to stress-induced generation of traps with relatively short time constants. These findings suggest that accumulated device operation that reaches out to the HP state under RF power or hard-switching conditions can result in undesirable degradation of...
全文获取路径: Elsevier  (合作)
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影响因子:1.137 (2012)

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