A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
作者: Jungwoo JohFeng GaoTomás PalaciosJesús A. del Alamo
作者单位: 1Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, United States
刊名: Microelectronics Reliability, 2010, Vol.50 (6), pp.767-773
来源数据库: Elsevier Journal
DOI: 10.1016/j.microrel.2010.02.015
关键词: GaNHEMTCritical voltageDegradationReliabilityModeling
英文摘要: Abstract(#br)It has recently been postulated that GaN high electron mobility transistors under high voltage stress degrade as a result of defect formation induced by excessive mechanical stress that is introduced through the inverse piezoelectric effect. This mechanism is characterized by a critical voltage beyond which irreversible degradation takes place. In order to improve the electrical reliability of GaN HEMTs, it is important to understand and model this degradation process. In this paper, we formulate a first-order model for mechanical stress and elastic energy induced by the inverse piezoelectric effect in GaN HEMTs which allows the computation of the critical voltage for degradation in these devices.
全文获取路径: Elsevier  (合作)
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影响因子:1.137 (2012)

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