Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module
作者: Po-Chien ChouStone Cheng
作者单位: 1Department of Mechanical Engineering, National Chiao Tung University, No. 1001, University Road, Hsinchu 30010, Taiwan
刊名: Applied Thermal Engineering, 2013, Vol.61 (2), pp.20-27
来源数据库: Elsevier Journal
DOI: 10.1016/j.applthermaleng.2013.07.004
关键词: GaN HEMTsPower semiconductor devicesPower moduleThermal managementIR thermal image
英文摘要: Abstract(#br)Emerging gallium nitride (GaN)-based high electron mobility transistor (HEMT) technology has the potential to make lower loss and higher power switching characteristics than those made using traditional silicon (Si) components. This work designed, developed, and tested an all-GaN-based power module. In a 200 V, 45 A module, each switching element comprises three GaN chips in parallel, each of which includes six 2.1 A AlGaN/GaN-on-Si HEMT cells. The cells are wire-bonded in parallel to scale up the power rating. Static I D -V DS characteristics of the module are experimentally obtained over widely varying base plate temperatures, and a low on-state resistance is obtained at an elevated temperature of 125 °C. The fabricated module has a blocking voltage exceeding 200 V at a...
全文获取路径: Elsevier  (合作)
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影响因子:2.127 (2012)

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