Effect of ion irradiation on the optical properties of Ag-doped Ge 2 Sb 2 Te 5 (GST) thin films
作者: Neetu KandaAnup ThakurFouran SinghA.P. Singh
作者单位: 1Thin Film Lab., Physics Department, Dr B R Ambedkar National Institute of Technology, Jalandhar 144 011, India
2Advanced Materials Research Lab., Department of Basic and Applied Sciences, Punjabi University, Patiala 147 002, India
3Material Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India
刊名: Nuclear Inst. and Methods in Physics Research, B, 2020, Vol.467 , pp.40-43
来源数据库: Elsevier Journal
DOI: 10.1016/j.nimb.2020.01.025
关键词: Chalcogenide alloysSwift heavy ions (SHI)Phase change materials and crystallization
原始语种摘要: Abstract(#br)Structural and optical study of pure and Ag-doped Ge 2 Sb 2 Te 5 (GST) thin films after swift heavy ion irradiation, is presented. In the present work, we have used 120 MeV Ag 9+ ions for irradiation using various ion fluence. Structural properties were investigated using XRD and Raman spectroscopy. Undoped films were found to crystallize at the highest fluence ( 1 × 10 13 ions/cm 2 ). Ag doping is found to suppress crystallization. From UV-Vis-NIR spectra, a decrease in optical bandgap was observed due to ion irradiation on these films. Observed results are explained on the basis of crystal nuclei, which results in crystallization and observed structural changes. Changes in defect chemistry are proposed to be responsible for the observed optical changes.
全文获取路径: Elsevier  (合作)
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