N-type vapor diffusion for the fabrication of GaSb thermophotovoltaic cells to increase the quantum efficiency in the long wavelength range
作者: Liangliang TangLewis M. FraasZhuming LiuYi ZhangHuiling DuanChang Xu
作者单位: 1College of Energy and Electrical Engineering, Hohai University, Nanjing 210098, China
2JX Crystals Inc., Issaquah, WA 98027, USA
3Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
刊名: Solar Energy Materials and Solar Cells, 2019, Vol.194 , pp.137-141
来源数据库: Elsevier Journal
DOI: 10.1016/j.solmat.2019.02.010
关键词: GaSbN-type diffusionThermophotovoltaic cells
原始语种摘要: Abstract(#br)N-type vapor diffusions in p-GaSb wafers is investigated using the group-VI elements S, Se and Te as diffusion sources. The group-VI elements are found difficult to diffuse in bare p-GaSb wafers because they react with Ga atoms to form compounds, thus hindering the diffusion. Deposition of a SiO layer on the p-GaSb surface is found to be crucial for realizing n-type diffusion. With this SiO coating layer, the concentration of group-VI atoms decreased to a low value limiting the reaction with Ga atoms. Se atoms are found to be good n-type diffusion sources. GaSb thermophotovoltaic cells with n-on-p structures are fabricated using Se diffusion. Compared with a traditional GaSb cell with a p-on-n structure, the cell with the n-on-p structure had a higher quantum efficiency at...
全文获取路径: Elsevier  (合作)
影响因子:4.63 (2012)

  • diffusion 扩散
  • vapor 
  • quantum 量子
  • fabrication 制造
  • fabricated 制造
  • cells 麻风细胞
  • structure 构造
  • efficiency 效率
  • layer 
  • wavelength 波长