Spin transport in n-type 3C–SiC observed in a lateral spin-pumping device
作者: Ei ShigematsuRyo OhshimaYuichiro AndoTeruya ShinjoTsunenobu KimotoMasashi Shiraishi
作者单位: 1Department of Electronic Science and Engineering, Kyoto University, Kyoto, 615-8510, Japan
刊名: Solid State Communications, 2020, Vol.305
来源数据库: Elsevier Journal
DOI: 10.1016/j.ssc.2019.113754
英文摘要: Abstract(#br)3C–SiC is a promising platform for semiconductor spintronics because it consists of light group-IV elements and has a zinc blende structure. To demonstrate spin transport in this attractive semiconductor, we conducted an experiment of spin-pump-induced spin transport through n-type 3C–SiC. A spin current is injected from Ni 80 Fe 20 into the SiC channel under ferromagnetic resonance of the Ni 80 Fe 20 . The DC electromotive force caused by the inverse spin Hall effect in an adjacent metal detector attached to the SiC is detected as a manifestation of the spin current transport. This indicates 1.2-μm-long spin transport through the n-type 3C–SiC at room temperature. This achievement is the first step in the investigation of the physics of 3C–SiC for further spintronics study...
全文获取路径: Elsevier  (合作)
影响因子:1.534 (2012)

  • pumping 抽运
  • device 装置
  • lateral 侧面的
  • observed 观察到的
  • transport 输运