Dependence of decay time of the photocurrent induced by transient ionizing radiation on TID in NPN bipolar transistors
作者: RuiBin LiChenHui WangChaoHui HeWei ChenJunLin LiChao QiYan Liu
作者单位: 1School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China
2State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
刊名: Nuclear Inst. and Methods in Physics Research, B, 2020, Vol.470 , pp.32-37
来源数据库: Elsevier Journal
DOI: 10.1016/j.nimb.2020.02.028
关键词: PhotocurrentTransient ionizing irradiationTIDBipolar transistor
原始语种摘要: Abstract(#br)When an NPN bipolar junction transistor (BJT) is exposed to the pulsed gamma (or X) irradiation, photocurrent is generated, containing the primary photocurrent and the secondary photocurrent. TID experiments and transient irradiation experiments were carried out. The results show that, as accumulating total ionizing dose (TID), the secondary photocurrent decays more severely, whereas the primary photocurrent is almost impervious. Moreover, the influence of TID on the secondary photocurrent decay is related to the BJT’s collector current. If the BJT is working under the condition of high injection, the influence of TID is quite weak, but it’s evident when the BJT is working under the medium or low injection condition. The charge control model is used to analyze the decay time...
全文获取路径: Elsevier  (合作)

  • ionizing 电离的
  • radiation 辐射
  • bipolar 二极的
  • transient 瞬变现象
  • photocurrent 光电流
  • induced 感应的
  • transistor 晶体管
  • decay 腐败
  • NPN Negative-Positive-Negative