Interfacial effect inducing thermal stability and dielectric response in CdCu 3 Ti 4 O 12 ceramics
作者: Zhanhui PengPengfei LiangJitong WangXiaobin ZhouJie ZhuXiaolian ChaoZupei Yang
作者单位: 1Key Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, Shaanxi, China
2School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, Shaanxi, China
刊名: Solid State Ionics, 2020, Vol.348
来源数据库: Elsevier Journal
DOI: 10.1016/j.ssi.2020.115290
关键词: Thermal stabilityDielectric permittivityInterfacial effectOxygen vacanciesDielectric relaxation
英文摘要: Abstract(#br)The thermal stability of dielectric materials with giant permittivity has always been a difficult/hot issue based on increasing demand for microelectronics and energy storage applications. In this work, we successfully synthesized Mg-doped CdCTO ceramics with a large permittivity via an ordinary mixed-oxide technique. Notably, the dielectric permittivity of the samples significantly increase at a low frequency of ~40–10 5 Hz, and especially ε r > 5.0 × 10 4 , tan δ ~ 0.1 when x = 0.10 at 1 kHz. Interestingly, the thermal stability of CdMg x Cu 3- x Ti 4 O 12 ceramics is closely linked with the enhanced interfacial effect. The acceptable dielectric performance was ascribed to the enhanced internal barrier layer capacitor (IBLC) effect due to the increased grain size upon Mg...
全文获取路径: Elsevier  (合作)
影响因子:2.046 (2012)

  • dielectric 电介质
  • thermal 热的
  • stability 稳定性
  • ceramics 陶瓷
  • effect 效应
  • inducing 施感的
  • Oxygen 氧气
  • relaxation 松弛
  • response 响应
  • permittivity 介电常数