Low temperature fabrication of high-performance VO 2 film via embedding low vanadium buffer layer
作者: Zihao XiangZhiming WuChunhui JiYuanlin ShiJinhong DaiZhangying HuangWen XuXiang DongJun WangYadong Jiang
作者单位: 1School of Optoelectronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
刊名: Applied Surface Science, 2020, Vol.517
来源数据库: Elsevier Journal
DOI: 10.1016/j.apsusc.2020.146101
关键词: Vanadium oxideBuffer layerLow temperature fabricationHigh performanceElectronic properties
原始语种摘要: Abstract(#br)Vanadium dioxide (VO 2 ), which can initiate an automatic reversible metal-to-insulator transition (MIT) from tetragonal to monoclinic structure at the transition temperature (Tc) of 68 °C, is a promising candidate to realize electronic devices due to its dramatic changes in electrical resistivity through MIT. Moreover, the application of VO 2 on modulation devices requires a narrow hysteresis width associated with a significant change in its electronic properties, which is quite challenging in VO 2 films fabricated by magnetron sputtering, besides, the high preparation temperature around 400 °C also hinders the further industrial production of VO 2 films. In this paper, by adding a simple and easy-to-obtain low-valence vanadium buffer layer between the substrate and the VO 2...
全文获取路径: Elsevier  (合作)
影响因子:2.112 (2012)

  • fabrication 制造
  • temperature 温度
  • layer 
  • performance 性能
  • properties 道具
  • embedding 包埋法
  • buffer 缓冲器
  • oxide 氧化物
  • vanadium