Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure
作者: Garima BhardwajNisha YadavS.G. AnjumM.J. SiddiquiP.A. Alvi
作者单位: 1Department of Electronics, Banasthali University, Banasthali, 304022 Rajasthan, India
2Department of Physics, Banasthali University, Banasthali, 304022 Rajasthan, India
3Department of Electronics, F/o of Engineering & Technology, Aligarh Muslim University, Aligarh 202002, UP, India
刊名: Optik - International Journal for Light and Electron Optics, 2017, Vol.146 , pp.8-16
来源数据库: Elsevier Journal
DOI: 10.1016/j.ijleo.2017.08.045
关键词: Uniaxial strainOptical gainInAsInGaAsGaAsSbk.p method
原始语种摘要: Abstract(#br)Semiconducting heterostructures offer an extra degree of flexibility in terms of tuning of optical gain and transition energies or wavelengths. Modifications in the wave functions and alterations in optical transitions in binary and ternary QW (quantum well) heterostructures due to external uniaxial strain provide valuable insights on the optical characteristics of the heterostructure. In this paper, we have reported the effect of uniaxial strain along [001], [100] and [110] on the optical properties such as optical gain, and optical transition energies of W − shaped complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure consisting of two quantum wells of InAs material using the six band k.p theory. On the basis of results obtained in the work, it can be reported that...
全文获取路径: Elsevier  (合作)
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关键词翻译
关键词翻译
  • optical 光学的
  • strain 应变
  • complex 超群
  • properties 道具
  • transition 转移
  • scale 度盘
  • uniaxial 单轴的
  • induced 感应的
  • tuning 
  • flexibility 柔顺性