Effect of sulfurization temperature on the phase purity of Cu 2 SnS 3 thin films deposited via high vacuum sulfurization
作者: Mohan Reddy PallavoluVasudeva Reddy Minnam ReddyBabu PejjaiDong-seob JeongChinho Park
作者单位: 1School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
刊名: Applied Surface Science, 2018
来源数据库: Elsevier Journal
DOI: 10.1016/j.apsusc.2018.08.112
关键词: M-CTS thin filmHigh vacuum sulfurizationPhase purityReduction of Sn loss
英文摘要: Abstract(#br)In this study, the deposition of Cu 2 SnS 3 (CTS) thin films was carried out at different sulfurization temperatures in the range of 350 – 550 o C under high vacuum of 1 Pa using the sputtered Cu/Sn/Cu metal precursor layers in the sulfur vapor atmosphere. In order to reduce the Sn loss, a particular metal stack of Cu/Sn/Cu was used. Single phase monoclinic (M)-CTS thin film was obtained at 500 o C. The high intensity Raman modes at 292 cm −1 and 350 cm −1 further confirmed the formation of M-CTS. The M-CTS thin film sulfurized at 500 o C showed a composition of Cu/Sn = 1.89 and an optical band gap energy of 0.94 eV. Hall effect measurement of the film sulfurized at 500 o C with Cu/Sn ratio of 1.82 showed an electrical resistivity of 7.30 Ω-cm, carrier concentration of 6.29 x...
全文获取路径: Elsevier  (合作)
影响因子:2.112 (2012)

  • sulfurization 硫化作用
  • vacuum 真空
  • purity 纯度
  • films 薄膜
  • temperature 温度
  • phase 相位
  • Reduction 还原
  • CTS Clear To Send