Active-edge FBK-INFN-LPNHE thin n-on-p pixel sensors for the upgrade of the ATLAS Inner Tracker
作者: G. CalderiniM. BombenL. D’ EramoA. DucourthialI. LuiseG. MarchioriG. BoscardinS. RonchinN. ZorziL. BosisioG.F. Dalla BettaG. DarboG. GiacominiM. MeschiniA. Messineo
作者单位: 1Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), 4 Place Jussieu, 75005 Paris, France
2Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) and TIPFA INFN, Via Sommarive 18, 38123 Trento, Italy
3Università di Trieste, Dipartimento di Fisica and INFN, 34127 Trieste, Italy
4University of Trento and TIFPA INFN, Via Sommarive 9, 38123 Trento, Italy
5INFN Genova, via Dodecaneso 33, 16146 Genova, Italy
6Brookhaven National Laboratory, Upton, NY 11973, United States
7INFN, Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy
8University of Pisa and INFN, Sezione di Pisa, Largo B. Pontecorvo 3, 56127 Pisa, Italy
刊名: Nuclear Inst. and Methods in Physics Research, A, 2018
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2018.10.035
关键词: Tracking detectorsSilicon detectorsPlanar pixelsActive edge
原始语种摘要: Abstract(#br)In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of thin 100 and 130 μ m n-in-p planar pixel sensors produced by FBK-CMM with active-edge technology in collaboration with LPNHE and INFN. Beam-test results are presented, with focus on the hit efficiency at the detector edge of a novel design consisting of a staggered deep trench.
全文获取路径: Elsevier  (合作)
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关键词翻译
关键词翻译
  • pixel 像素
  • ATLAS 阿特拉斯计算机
  • Active 活性的
  • Tracking 追踪
  • detector 探测器检波器
  • silicon 
  • candidate 选择物
  • achieve 达到
  • CMM Communications Multiplexer Module
  • upgrade 升级