Performance of new radiation-tolerant thin planar and 3D columnar n + on p silicon pixel sensors up to a maximum fluence of ∼ 5 × 1 0 15 <ce:hsp sp="0.16667"/>n eq /cm 2
作者: M. BoscardinR. CeccarelliG.F. Dalla BettaG. DarboM.E. DinardoG. GiacominiD. MenasceR. MendicinoM. MeschiniA. MessineoL. MoroniR. RiveraS. RonchinD.M.S. SultanL. UpleggerL. VilianiI. ZoiD. Zuolo
作者单位: 1Fondazione Bruno Kessler, Trento, Italy
2TIFPA-INFN, Trento, Italy
3Università degli Studi di Firenze, Firenze, Italy
4INFN, Firenze, Italy
5Università di Trento, Trento, Italy
6INFN, Genova, Italy
7Università degli Studi di Milano-Bicocca, Milano, Italy
8INFN-Bicocca, Milano, Italy
9Università degli Studi di Pisa, Pisa, Italy
10INFN, Pisa, Italy
11Fermi National Accelerator Laboratory, Batavia, USA
12Hamburg University, Hamburg, Germany
刊名: Nuclear Inst. and Methods in Physics Research, A, 2020, Vol.953
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2019.163222
关键词: PixelSiliconSensorPlanar3DRadiation hardHL-LHC
原始语种摘要: Abstract(#br)The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new high radiation-tolerant solid-state pixel sensors, capable of surviving irradiation fluences up to a few 1 0 16 n eq /cm 2 at ∼ 3 cm from the interaction point. The INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n + on p type pixel sensors to be operated at the HL-LHC. The R&D covers both planar and 3D pixel devices made on substrates obtained by the Direct Wafer Bonding technique. The active thickness of the planar sensors studied in this paper is 100 μ m or 130 μ m , that of 3D sensors 130...
全文获取路径: Elsevier  (合作)

  • pixel 像素
  • radiation 辐射
  • tolerant 容许
  • silicon 
  • planar 平坦的
  • width 幅度
  • aiming 对准
  • ATLAS 阿特拉斯计算机
  • fluence 积分通量
  • maximum 最大值