On the weighting field of irradiated silicon detectors
作者: J. SchwandtR. Klanner
作者单位: 1Institute for Experimental Physics, University of Hamburg, Luruper Chaussee 149, D22761, Hamburg, Germany
刊名: Nuclear Inst. and Methods in Physics Research, A, 2019, Vol.942
来源数据库: Elsevier Journal
DOI: 10.1016/j.nima.2019.162418
关键词: Silicon detectorsRadiation damageTime-dependent weighting field
原始语种摘要: Abstract(#br)The understanding of the weighting field of irradiated silicon sensors is essential for calculating the response of silicon detectors in the radiation environment at accelerators like at the CERN LHC. Using 1-D calculations of non-irradiated pad sensors and 1-D TCAD (Technology Computer-Aided Design) simulations of pad sensors before and after irradiation, it is shown that the time-dependence of the weighting field is related to the resistivity of low field regions with ohmic behaviour in the sensor. A simple formula is derived, which relates the time constant of the time-dependent weighting field, τ , with the resistivity and the extension of the low-field region for pad detectors. As the resistivity of irradiated silicon increases with fluence and finally reaches the...
全文获取路径: Elsevier  (合作)

  • silicon 
  • weighting 评价
  • field 
  • resistivity 电阻率
  • width 幅度
  • dependence 从属
  • independent 独立的
  • ohmic 欧姆
  • calculated 计算的
  • diode 二极管