On the weighting field of irradiated silicon detectors
| 作者： | J. Schwandt, R. Klanner |
| 作者单位： |
1Institute for Experimental Physics, University of Hamburg, Luruper Chaussee 149, D |
| 刊名： | Nuclear Inst. and Methods in Physics Research, A, 2019, Vol.942 |
| 来源数据库： | Elsevier Journal |
| DOI： | 10.1016/j.nima.2019.162418 |
| 关键词： | Silicon detectors; Radiation damage; Time-dependent weighting field; |
| 原始语种摘要： | Abstract(#br)The understanding of the weighting field of irradiated silicon sensors is essential for calculating the response of silicon detectors in the radiation environment at accelerators like at the CERN LHC. Using 1-D calculations of non-irradiated pad sensors and 1-D TCAD (Technology Computer-Aided Design) simulations of pad sensors before and after irradiation, it is shown that the time-dependence of the weighting field is related to the resistivity of low field regions with ohmic behaviour in the sensor. A simple formula is derived, which relates the time constant of the time-dependent weighting field, τ , with the resistivity and the extension of the low-field region for pad detectors. As the resistivity of irradiated silicon increases with fluence and finally reaches the... |
