A junction-level optoelectronic characterization of etching-induced damage for third-generation HgCdTe infrared focal-plane array photodetectors
作者: Peng WangYueming WangMingzai WuZhenhua Ye
作者单位: 1Anhui University, School of Physics & Materials Science, Hefei 230601, China
2Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
3Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
刊名: Infrared Physics and Technology, 2018, Vol.91 , pp.119-122
来源数据库: Elsevier Journal
DOI: 10.1016/j.infrared.2017.12.007
关键词: HgCdTe infrared photodetectorInfrared focal plane arraysLaser beam induced current (LBIC)Dry etching damages
原始语种摘要: Abstract(#br)Third-generation HgCdTe-based infrared focal plane arrays require high aspect ratio trenches with admissible etch induced damage at the surface and sidewalls for effectively isolating the pixels. In this paper, the high-density inductively coupled plasma enhanced reaction ion etching technique has been used for micro-mesa delineation of HgCdTe for third-generation infrared focal-plane array detectors. A nondestructive junction-level optoelectronic characterization method called laser beam induced current (LBIC) is used to evaluate the lateral junction extent of HgCdTe etch-induced damage scanning electron microscopy. It is found that the LBIC profiles exhibit evident double peaks and valleys phenomena. The lateral extent of etch induced mesa damage of ∼2.4 µm is obtained by...
全文获取路径: Elsevier  (合作)
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影响因子:1.364 (2012)

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关键词翻译
关键词翻译
  • etching 蚀刻法
  • optoelectronic 光电子的
  • plane 平面
  • induced 感应的
  • infrared 红外线
  • focal 焦点的
  • photodetector 光检测器
  • current 
  • junction 连接
  • generation 世代