SiC(1 0 0) ordered film growth by C 60 decomposition on Si(1 0 0) surfaces
作者: P. MorasN. MahneL. FerrariA. PesciM. CapoziL. AversaS.N. JhaR. VerucchiS. IannottaM. Pedio
作者单位: 1ISM-CNR, Sede di Trieste, Area Science Park, Basovizza 34012, Trieste, Italy
2CeFSA Centro CNR-ITC per la Fisica degli Stati Aggregati, Via Sommarive 18, Povo 38050, Trento, Italy
3Spectroscopy Division BARC, Mumbai 400 085, India
4Dipartimento di Fisica, Universita’ degli Studi di Trieste, 34100 Trieste, Italy
刊名: Applied Surface Science, 2001, Vol.184 (1), pp.50-54
来源数据库: Elsevier Journal
DOI: 10.1016/S0169-4332(01)00476-7
关键词: FullereneSilicon carbideFilm growthSurface spectroscopy
原始语种摘要: Abstract(#br)Fullerene (C 60 ) was deposited on Si(100) 2×1 double domain reconstructed substrate. The interface has been treated with annealing procedure in order to fragment the C 60 precursor and to induce covalent Si–C bond formation and to obtain carbidization. In this way SiC(100) films of thousands of Å have been grown. Depending on the growth procedure different surface structures, 1×1 or 2×1, have been obtained. The different stages of growth has been checked by in situ low energy electron diffraction (LEED), and Auger spectroscopy. Ex situ we verified surface order by means of LEED technique, observing either a 1×1 or a 2×1 double domain reconstruction. We characterized electronic properties collecting...
全文获取路径: Elsevier  (合作)
影响因子:2.112 (2012)

  • ordered 有序的
  • growth 生长
  • diffraction 衍射
  • obtain 获得
  • grown 生长
  • procedure 手续
  • valence 原子价
  • reconstructed 修]重构[建
  • observing 看到
  • reconstruction 复原