Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells
作者: Liangliang TangChang XuZhuming LiuQi LuAndrew MarshallAnthony Krier
作者单位: 1College of Energy and Electrical Engineering, Hohai University, Nanjing 210098, China
2Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
3Quantum Technology Centre, Physics Department, Lancaster University, Lancaster LA1 4YB, UK
刊名: Solar Energy Materials and Solar Cells, 2017, Vol.163 , pp.263-269
来源数据库: Elsevier Journal
DOI: 10.1016/j.solmat.2017.01.019
关键词: Zn diffusionGaInAsSbThermophotovoltaic cells
原始语种摘要: Abstract(#br)Zn diffusion processes in n-Ga 0.78 In 0.22 As 0.2 Sb 0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface “dead region”. The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The “dead region” is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055°C-SiN ceramics emitter, the output power density of...
全文获取路径: Elsevier  (合作)
影响因子:4.63 (2012)

  • dead region 死区
  • fabricated 制造
  • fabrication 制造
  • surface 
  • diffusion 扩散
  • cells 麻风细胞
  • epitaxial 外延
  • electrical 电的
  • conditions 条件式
  • etching 蚀刻法