Optimal target sputtering mode for aluminum nitride thin film deposition by high power pulsed magnetron sputtering
作者: D.L. MaH.Y. LiuQ.Y. DengW.M. YangK. SilinsN. HuangY.X. Leng
作者单位: 1Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
2Institute of Mechanical Manufacturing Technology, China Academy of Engineering Physics, Mianyang, 621900, Sichuan, China
3Division of Electricity, Angstrom Laboratory, Uppsala University, SE-751 21, Uppsala, Sweden
刊名: Vacuum, 2018
来源数据库: Elsevier Journal
DOI: 10.1016/j.vacuum.2018.11.058
关键词: High power pulsed magnetron sputteringAluminum nitrideSputtering modesSputtering powerMicrostructureTexture
原始语种摘要: Abstract(#br)Low surface roughness, low residual stress, and (002) textured aluminum nitride (AlN) thin films are favored for applications in microelectronic and optoelectronic devices. In this paper, AlN thin films were deposited by reactive high power pulsed magnetron sputtering (HPPMS). The effect of aluminum target sputtering mode and sputtering power on thin film residual stress, crystalline structure, surface roughness, and morphology of AlN thin films was studied. The results indicate that, with Al target sputtering mode transfer from metallic mode to transitional and compound modes, respectively, the number of Al species decrease, and ion-to-neutral ratio of Al species increase. Comparing the AlN thin film deposited in compound mode with that deposited in transitional mode, the...
全文获取路径: Elsevier  (合作)
影响因子:1.53 (2012)

  • sputtering 溅射
  • deposition 沉积
  • magnetron 磁控管
  • aluminum 
  • nitride 氮化物
  • pulsed 脉冲
  • target 目标
  • power 功率