Metal/metal-oxide thin layer heterostructure by laser treatment for memristor application
作者: R. GhasemiL. JamilpanahM. ShafeiI. KhademiS.M. MohseniM.M. Tehranchi
作者单位: 1Laser and Plasma Research Institute, Shahid Beheshti University, Tehran 19839, Iran
2Department of Physics, Shahid Beheshti University, Tehran 19839, Iran
刊名: Materials Letters, 2020, Vol.261
来源数据库: Elsevier Journal
DOI: 10.1016/j.matlet.2019.127094
关键词: MemristorLaser treatmentOxidationElectronic materials
英文摘要: Abstract(#br)Metal-oxide memristors are one of the most important sets of memristors for use as the future memory and computing elements. In this context, developing novel methods for producing metal/metal-oxide thin film heterostructures is demanded. Here, we use a 354 nm pulsed laser for treatment of a thin (40 nm) Ni 8 0 Fe 20 (Permalloy, Py) layer and observe its memristive characteristics. The laser treatment (LT) resulted in oxidation of the surface of the Py layer and therefore forming a uniform Py/Py-oxide heterostructure. The oxygen vacancy formation and rupture for memristivity mechanism is evidenced by I-V measurement of two samples with different oxide thicknesses. The sample with lower thickness of oxidized Py shows lower voltage threshold and higher ON/OFF ratio. Results...
全文获取路径: Elsevier  (合作)
影响因子:2.224 (2012)

  • treatment 处理
  • metal 金属
  • application 申请
  • materials 工业三废
  • laser 激光
  • oxide 氧化物
  • layer 
  • Laser 莱塞牌汽车