Stable and high-speed SiC bulk growth without dendrites by the HTCVD method
作者: Yuichiro TokudaEmi MakinoNaohiro SugiyamaIsaho KamataNorihiro HoshinoJun KojimaKazukuni HaraHidekazu Tsuchida
作者单位: 1DENSO CORPORATION, 500-1 Minamiyama, Komenoki-cho, Nisshin-shi, Aichi 470-0111, Japan
2R&D Partnership for Future Power Electronics Technology (FUPET), Japan
3Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka-shi, Kanagawa 240-0196, Japan
刊名: Journal of Crystal Growth, 2016, Vol.448 , pp.29-35
来源数据库: Elsevier Journal
DOI: 10.1016/j.jcrysgro.2016.03.046
关键词: A1. DendritesA2. Growth from vaporA2. Industrial crystallizationA2. Single crystal growthB2. Semiconducting silicon compounds
原始语种摘要: Abstract(#br)We investigate growth conditions to obtain high-quality SiC bulk crystals by the High-Temperature Chemical Vapor Deposition (HTCVD) method. Formation of dendrite crystals, which sometimes occurs on the growth front and degrades the material quality, is raised as an issue. We find that a bulk crystal growth under a high vertical temperature gradient, where the temperature of the back side of the bulk crystal is much lower than that of the crystal surface, suppresses the formation of dendrite crystals. Under growth conditions with a high temperature gradient, a very high-speed growth of 2.4mm/h is achieved without the formation of dendrite crystals. Growth of a thick 4H–SiC bulk crystal without the dendrites is demonstrated and the quality of a grown crystal...
全文获取路径: Elsevier  (合作)
影响因子:1.552 (2012)

  • growth 生长
  • crystal 晶体
  • without 在之外
  • silicon 
  • method 方法
  • grown 生长
  • temperature 温度
  • raised 提升
  • vapor 
  • formation 建造