Thermally deposited silk fibroin as the gate dielectric layer in organic thin-film transistors based on conjugated polymer
作者: Fang-Cheng LiangYi-Hsing HuangChi-Ching KuoChia-Jung ChoSyang-Peng RweiQun JiaYuansheng DingYougen ChenRedouane Borsali
作者单位: 1Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, Taiwan
2Grenoble Alpes University, CNRS, CERMAV UPR 5301, 38000 Grenoble, France
3Research and Development Center for Smart Textile Technology, National Taipei University of Technology, 10608 Taipei, Taiwan
4Institute for Advanced Study, Shenzhen University, Nanshan District, Shenzhen, Guangdong 518060, PR China
刊名: Reactive and Functional Polymers, 2018
来源数据库: Elsevier Journal
DOI: 10.1016/j.reactfunctpolym.2018.08.010
关键词: P3HTSilk fibroinDielectric layerFiber-like morphologyOrganic thin-film transistors (OTFTs)
原始语种摘要: Abstract(#br)This study investigated the morphology, structural transformation, and electric properties of organic thin-film transistors (OTFTs) with silk fibroin as their dielectric layer at different annealing temperatures. Silk fibroin was employed because it can simplify the OTFT fabrication process and decrease fabrication cost. We successfully fabricated OTFTs based on poly(3-hexylthiophene) (P3HT) dissolved in chlorobenzene (CB) or 1,2,4-trichlorobeneze (TCB). The P3HT had fiber-like network structures when TCB was used and isolated spherical domains when CB was employed. The nanowire morphology obtained when TCB was used may have enabled efficient charge transport. The silk fibroin layer annealed at 40 °C had the smallest particles and least aggregate. The calculated field-effect...
全文获取路径: Elsevier  (合作)
影响因子:2.505 (2012)

  • 聚合物 基于
  • fibroin 丝蛋白
  • morphology 形态学
  • dielectric 电介质
  • conjugated 共轭的
  • layer 
  • organic 有机的
  • based 基于
  • polymer 基于