Stacking faults modulation for scattering optimization in GeTe-based thermoelectric materials
作者: Li XieYongjin ChenRuiheng LiuErhong SongTong XingTingting DengQingfeng SongJianjun LiuRenkui ZhengXiang GaoShengqiang BaiLidong Chen
作者单位: 1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
3Center for High Pressure Science &Technology Advanced Research, Beijing, 100094, China
刊名: Nano Energy, 2020, Vol.68
来源数据库: Elsevier Journal
DOI: 10.1016/j.nanoen.2019.104347
关键词: GeTeStacking faultsScattering optimizationThermoelectric materials
原始语种摘要: Abstract(#br)The enhancement of thermoelectric (TE) performance is essentially associated with optimizing the scattering effect of electron and phonon. Here, we demonstrate a stacking faults modulation strategy in GeTe materials to simultaneously realize high carrier mobility and low lattice thermal conductivity. Excess Cu doping in GeTe can significantly decrease the concentration of Ge vacancy layer and form a “vacancy/Cu–Cu/vacancy” sandwich-like stacking faults structure. As a result, the hole mobility is remarkably improved to nearly ~100 cm 2 V −1 s −1 at room temperature due to the weakened carrier scattering from vacancy layer, which ensures superior electrical transport properties. Meanwhile, the sandwich-like stacking faults brings much stronger scattering effect on phonons,...
全文获取路径: Elsevier  (合作)

  • thermoelectric 热电的
  • scattering 散射
  • optimization 最佳化
  • modulation 
  • materials 工业三废
  • based 基于